Invention Grant
- Patent Title: Semiconductor structure with multilayer III-V heterostructures
- Patent Title (中): 具有多层III-V异质结构的半导体结构
-
Application No.: US14825949Application Date: 2015-08-13
-
Publication No.: US09577042B1Publication Date: 2017-02-21
- Inventor: Steven Bentley , Rohit Galatage
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Heslin Rothenberg Farley & Mesiti P.C.
- Agent Wayne F. Reinke, Esq.
- Main IPC: H01L29/205
- IPC: H01L29/205 ; H01L29/165 ; H01L29/10 ; H01L29/78 ; H01L29/66
Abstract:
The source/drain of a fully III-V semiconductor or Si-based transistor includes a bottom barrier layer that may be lattice matched to the channel, a lower layer of a wide bandgap III-V material and a top layer of a comparatively narrow bandgap III-V material, with a compositionally graded layer between the lower layer and top layer gradually transitioning from the wide bandgap material to the narrow bandgap material.
Public/Granted literature
- US20170047404A1 SEMICONDUCTOR STRUCTURE WITH MULTILAYER III-V HETEROSTRUCTURES Public/Granted day:2017-02-16
Information query
IPC分类:
