Invention Grant
- Patent Title: Zener diode having an adjustable breakdown voltage
- Patent Title (中): 具有可调击穿电压的齐纳二极管
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Application No.: US14963670Application Date: 2015-12-09
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Publication No.: US09577053B2Publication Date: 2017-02-21
- Inventor: Roberto Simola , Pascal Fornara
- Applicant: STMicroelectronics (Rousset) SAS
- Applicant Address: FR Rousset
- Assignee: STMICROELECTRONICS (ROUSSET) SAS
- Current Assignee: STMICROELECTRONICS (ROUSSET) SAS
- Current Assignee Address: FR Rousset
- Agency: Seed IP Law Group LLP
- Priority: FR1552290 20150319
- Main IPC: H01L29/866
- IPC: H01L29/866 ; H01L29/40 ; H01L29/739 ; H01L29/06
Abstract:
The present disclosure relates to a Zener diode including a Zener diode junction formed in a semiconductor substrate along a plane parallel to the surface of the substrate, and positioned between a an anode region having a first conductivity type and a cathode region having a second conductivity type, the cathode region extending from the surface of the substrate. A first conducting region is configured to generate a first electric field perpendicular to the plane of the Zener diode junction upon application of a first voltage to the first conducting region, and a second conducting region is configured to generate a second electric field along the plane of the Zener diode junction upon application of a second voltage to the second conducting region.
Public/Granted literature
- US20160276447A1 ZENER DIODE HAVING AN ADJUSTABLE BREAKDOWN VOLTAGE Public/Granted day:2016-09-22
Information query
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