Invention Grant
- Patent Title: Structure and formation method of semiconductor device structure
- Patent Title (中): 半导体器件结构的结构和形成方法
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Application No.: US14994718Application Date: 2016-01-13
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Publication No.: US09577078B1Publication Date: 2017-02-21
- Inventor: Steve S. Chung , E-Ray Hsieh , Yu-Bin Zhao , Samuel C. Pan
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd. , National Chiao Tung University
- Applicant Address: TW Hsinchu TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.,National Chiao Tung University
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.,National Chiao Tung University
- Current Assignee Address: TW Hsinchu TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/02 ; H01L21/336 ; H01L29/66 ; H01L29/786
Abstract:
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a source structure in a semiconductor substrate. The semiconductor device structure also includes a channel layer over the semiconductor substrate. A first portion of the channel layer covers a portion of the source structure. A second portion of the channel layer laterally extends away from the source structure. The semiconductor device structure further includes a drain structure over the semiconductor substrate. The drain structure and the source structure have different conductivity types. The drain structure adjoins the second portion of the channel layer.
Information query
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