发明授权
- 专利标题： Growth of large aluminum nitride single crystals with thermal-gradient control
- 专利标题（中）： 通过热梯度控制生长大型氮化铝单晶
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申请号： US14686812申请日： 2015-04-15
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公开(公告)号： US09580833B2公开(公告)日： 2017-02-28
- 发明人: Robert T. Bondokov , Shailaja P. Rao , Shawn R. Gibb , Leo J. Schowalter
- 申请人： Robert T. Bondokov , Shailaja P. Rao , Shawn R. Gibb , Leo J. Schowalter
- 申请人地址： US NY Green Island
- 专利权人： CRYSTAL IS, INC.
- 当前专利权人： CRYSTAL IS, INC.
- 当前专利权人地址： US NY Green Island
- 代理机构： Morgan, Lewis & Bockius LLP
- 主分类号： C30B23/06
- IPC分类号： C30B23/06 ; C30B23/00 ; C30B29/40
摘要：
In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.
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