Invention Grant
US09583219B2 Method and apparatus for in-system repair of memory in burst refresh
有权
用于在脉冲刷新中进行内存修复的方法和装置
- Patent Title: Method and apparatus for in-system repair of memory in burst refresh
- Patent Title (中): 用于在脉冲刷新中进行内存修复的方法和装置
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Application No.: US14499161Application Date: 2014-09-27
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Publication No.: US09583219B2Publication Date: 2017-02-28
- Inventor: Jung Pill Kim , Dexter Tamio Chun , Deepti Vijayalakshmi Sriramagiri , Jungwon Suh
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G06F11/07 ; G11C11/406 ; G11C17/16 ; G11C17/18 ; G11C29/02
Abstract:
In a repair of a random access memory (RAM), an error information is received, a fail address of the RAM identified, and a one-time programming applied to a portion of the redundancy circuit while a content of the RAM is valid. Optionally, the RAM is a dynamic access RAM (DRAM), a refresh burst is applied to the DRAM, followed by a non-refresh interval, and the one-time programming is performed during the non-refresh interval.
Public/Granted literature
- US20160093403A1 METHOD AND APPARATUS FOR IN-SYSTEM REPAIR OF MEMORY IN BURST REFRESH Public/Granted day:2016-03-31
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