Invention Grant
US09583333B2 Low temperature silicon nitride films using remote plasma CVD technology
有权
使用远程等离子体CVD技术的低温氮化硅膜
- Patent Title: Low temperature silicon nitride films using remote plasma CVD technology
- Patent Title (中): 使用远程等离子体CVD技术的低温氮化硅膜
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Application No.: US14520721Application Date: 2014-10-22
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Publication No.: US09583333B2Publication Date: 2017-02-28
- Inventor: Amit Chatterjee , Abhijit Basu Mallick , Nitin K. Ingle
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan, LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C23C16/34 ; C23C16/44 ; C23C16/452 ; C23C16/455
Abstract:
Embodiments of the present invention generally provide methods for forming a silicon nitride layer on a substrate. In one embodiment, a method of forming a silicon nitride layer using remote plasma chemical vapor deposition (CVD) at a temperature that is less than 300 degrees Celsius is disclosed. The precursors for the remote plasma CVD process include tris(dimethylamino)silane (TRIS), dichlorosilane (DCS), trisilylamine (TSA), bis-t-butylaminosilane (BTBAS), hexachlorodisilane (HCDS) or hexamethylcyclotrisilazane (HMCTZ).
Public/Granted literature
- US20150126045A1 LOW TEMPERATURE SILICON NITRIDE FILMS USING REMOTE PLASMA CVD TECHNOLOGY Public/Granted day:2015-05-07
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