Invention Grant
US09583380B2 Anisotropic material damage process for etching low-K dielectric materials
有权
用于蚀刻低K电介质材料的各向异性材料损伤过程
- Patent Title: Anisotropic material damage process for etching low-K dielectric materials
- Patent Title (中): 用于蚀刻低K电介质材料的各向异性材料损伤过程
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Application No.: US14334385Application Date: 2014-07-17
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Publication No.: US09583380B2Publication Date: 2017-02-28
- Inventor: Errol Todd Ryan
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L21/4763 ; H01L23/532 ; H01L29/06 ; H01L21/768 ; H01L23/522 ; H01L21/311 ; H01L21/3105
Abstract:
In one example, a method includes forming a mask layer above or in a dielectric material. The dielectric material is exposed to photon radiation in an ambient atmosphere comprising a carbon gettering agent to generate damaged portions of the dielectric material. The mask layer blocks the photon radiation. The damaged portions of the dielectric material are removed.
Public/Granted literature
- US20160020140A1 ANISOTROPIC MATERIAL DAMAGE PROCESS FOR ETCHING LOW-K DIELECTRIC MATERIALS Public/Granted day:2016-01-21
Information query
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