Invention Grant
- Patent Title: Organic thin film passivation of metal interconnections
- Patent Title (中): 金属互连有机薄膜钝化
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Application No.: US15018686Application Date: 2016-02-08
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Publication No.: US09583390B2Publication Date: 2017-02-28
- Inventor: Aleksandar Aleksov , Tony Dambrauskas , Danish Faruqui , Mark S. Hlad , Edward R. Prack
- Applicant: INTEL CORPORATION
- Applicant Address: US CA Santa Clara
- Assignee: INTEL CORPORATION
- Current Assignee: INTEL CORPORATION
- Current Assignee Address: US CA Santa Clara
- Agency: Konrad Raynes Davda & Victor
- Agent Alan S. Raynes
- Main IPC: H01L21/3205
- IPC: H01L21/3205 ; H01L21/78 ; H01L25/065 ; H01L25/00 ; H01L21/56 ; H01L21/683 ; H01L21/02 ; H01L23/498 ; H01L21/027 ; H01L21/768 ; H01L23/00 ; H01L23/31

Abstract:
Electronic assemblies and their manufacture are described. One embodiment relates to a method including depositing an organic thin film layer on metal bumps on a semiconductor wafer, the organic thin film layer also being formed on a surface adjacent to the metal bumps on the wafer. The wafer is diced into a plurality of semiconductor die structures, the die structures including the organic thin film layer. The semiconductor die structures are attached to substrates, wherein the attaching includes forming a solder bond between the metal bumps on a die structure and bonding pads on a substrate, and wherein the solder bond extends through the organic thin film layer. The organic thin film layer is then exposed to a plasma. Other embodiments are described and claimed.
Public/Granted literature
- US20160155667A1 ORGANIC THIN FILM PASSIVATION OF METAL INTERCONNECTIONS Public/Granted day:2016-06-02
Information query
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