Invention Grant
- Patent Title: Source/drain terminal contact and method of forming same
- Patent Title (中): 源极/漏极端子接触及其形成方法
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Application No.: US15151720Application Date: 2016-05-11
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Publication No.: US09583397B1Publication Date: 2017-02-28
- Inventor: Derya Deniz , Benjamin G. Moser , Sunit S. Mahajan , Domingo A. Ferrer Luppi
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Hoffman Warnick, LLC
- Agent Francois Pagette
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/8238 ; H01L29/45 ; H01L21/3205 ; H01L21/3215 ; H01L21/768 ; H01L21/321 ; H01L21/285 ; H01L21/266
Abstract:
One aspect of the disclosure relates to a contact within a dielectric layer to a source/drain terminal of a field-effect-transistor (FET). The contact may include: a titanium-tantalum-silicide at a surface of the source/drain terminal; a barrier layer over the titanium-tantalum-silicide; and a metal over the barrier layer and extending to a top surface of the dielectric layer.
Information query
IPC分类:
