Invention Grant
- Patent Title: Method of manufacturing a semiconductor device using semiconductor measurement system
- Patent Title (中): 使用半导体测量系统制造半导体器件的方法
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Application No.: US14794813Application Date: 2015-07-09
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Publication No.: US09583402B2Publication Date: 2017-02-28
- Inventor: Sung Yoon Ryu , Wooseok Ko , Souk Kim , Yusin Yang , Sangkil Lee , Chungsam Jun , Kwanwoo Ryu
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2014-0095944 20140728
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L21/67
Abstract:
A method includes loading a substrate into a sensing chamber; while the substrate is in the sensing chamber, performing a spectral analysis of the substrate; transferring the substrate between the sensing chamber and a processing chamber coupled to the sensing chamber; processing the substrate in the processing chamber to form at least a first layer and/or pattern on the substrate; and based on at least the spectral analysis, determining whether a parameter resulting from the formation of first layer and/or pattern is satisfied.
Public/Granted literature
- US20160027707A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING SEMICONDUCTOR MEASUREMENT SYSTEM Public/Granted day:2016-01-28
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