Invention Grant
US09583462B2 Damascene re-distribution layer (RDL) in fan out split die application
有权
大马士革分布层（RDL）在扇出分割模具应用中
- Patent Title: Damascene re-distribution layer (RDL) in fan out split die application
- Patent Title (中): 大马士革分布层（RDL）在扇出分割模具应用中
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Application No.: US14689011Application Date: 2015-04-16
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Publication No.: US09583462B2Publication Date: 2017-02-28
- Inventor: Jae Sik Lee , Hong Bok We , Dong Wook Kim
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM INCORPORATED
- Current Assignee: QUALCOMM INCORPORATED
- Current Assignee Address: US CA San Diego
- Agency: Seyfarth Shaw LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L25/065 ; H01L21/56 ; H01L21/768 ; H01L23/29 ; H01L23/31 ; H01L23/522 ; H01L25/00 ; H01L23/00 ; H01L23/498 ; H01L23/538
Abstract:
A semiconductor device may include a first semiconductor die. A passivation layer supports the first semiconductor die. The passivation layer may include a first via having a barrier layer and a first redistribution layer (RDL) conductive interconnect coupled to the first via through the barrier layer. The first via may couple the first semiconductor die to the first RDL conductive interconnect.
Public/Granted literature
- US20160218082A1 DAMASCENE RE-DISTRIBUTION LAYER (RDL) IN FAN OUT SPLIT DIE APPLICATION Public/Granted day:2016-07-28
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