Invention Grant
- Patent Title: Polycrystalline oxide thin-film transistor array substrate and method of manufacturing same
- Patent Title (中): 多晶氧化物薄膜晶体管阵列基板及其制造方法
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Application No.: US14785719Application Date: 2015-04-10
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Publication No.: US09583517B2Publication Date: 2017-02-28
- Inventor: Hehe Hu
- Applicant: BOE TECHNOLOGY GROUP CO., LTD.
- Applicant Address: CN Beijing
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee Address: CN Beijing
- Agency: Nath, Goldberg & Meyer
- Agent Joshua B. Goldberg; Christopher Thomas
- Priority: CN201410640940 20141113
- International Application: PCT/CN2015/076263 WO 20150410
- International Announcement: WO2016/074427 WO 20160519
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L21/02 ; H01L21/77 ; H01L29/786 ; H01L29/10 ; H01L21/465 ; H01L21/469 ; H01L21/477 ; H01L29/66
Abstract:
This invention provides a polycrystalline oxide thin-film transistor (TFT) array substrate and a method of manufacturing the same. As the polycrystalline oxide thin film layer of the polycrystalline oxide TFT array substrate is formed by a two-step process according to the present invention, the ultra-high temperature annealing process required in the prior art is obviated, and the object of producing a polycrystalline oxide TFT array substrate by the existing manufacturing facilities of the amorphous oxide TFT array substrates is achieved without adding any special equipment or special operation, and it is easy to implement; meanwhile, the energy consumption is reduced as the high temperature annealing is no longer needed.
Public/Granted literature
- US20160343732A1 Polycrystalline Oxide Thin-Film Transistor Array Substrate and Method of Manufacturing Same Public/Granted day:2016-11-24
Information query
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