Invention Grant
- Patent Title: Light emitting device
- Patent Title (中): 发光装置
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Application No.: US14941972Application Date: 2015-11-16
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Publication No.: US09583545B2Publication Date: 2017-02-28
- Inventor: Takahiro Kawakami , Kaoru Tsuchiya , Takeshi Nishi
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., LTD.
- Current Assignee: Semiconductor Energy Laboratory Co., LTD.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Nixon Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: JP2003-432207 20031226
- Main IPC: H01L27/32
- IPC: H01L27/32 ; H01L27/12 ; H01L51/52

Abstract:
An object of the present invention is to provide a light emitting device in which variations in an emission spectrum depending on a viewing angle with respect to a side from which luminescence is extracted are decreased. A light emitting device according to the invention has a transistor, an insulating layer covering the transistor and a light emitting element provided in an opening of the insulating layer. The transistor and the light emitting element are electronically connected through a connecting portion. Additionally, the connecting portion is connected to the transistor through a contact hole penetrating the insulating layer. Note that the insulating layer may be a single layer or a multilayer in which a plurality of layers including different substances is laminated.
Public/Granted literature
- US20160071915A1 LIGHT EMITTING DEVICE Public/Granted day:2016-03-10
Information query
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