Invention Grant
- Patent Title: Integrated circuits including a MIMCAP device and methods of forming the same for long and controllable reliability lifetime
- Patent Title (中): 包括MIMCAP器件的集成电路及其长期可控可靠性寿命的方法
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Application No.: US14835278Application Date: 2015-08-25
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Publication No.: US09583557B2Publication Date: 2017-02-28
- Inventor: Lili Cheng , Dina H. Triyoso , Jeasung Park , David Paul Brunco , Robert Fox , Sanford Chu
- Applicant: GLOBALFOUNDRIES, Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES, INC.
- Current Assignee: GLOBALFOUNDRIES, INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Lorenz & Kopf, LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L49/02 ; H01L23/522 ; H01L21/02 ; G06F17/50

Abstract:
Integrated circuits including a MIMCAP device and methods of forming the integrated circuits are provided. An exemplary method of forming an integrated circuit including a MIMCAP device includes pre-determining a thickness of at least one of a bottom high-K layer or a top high-K layer of the MIMCAP device, followed by fabricating the MIMCAP device. The pre-determined thickness is established based upon a pre-determined TDDB lifetime for the MIMCAP device and a minimum target capacitance density at an applied voltage bias to be employed for the MIMCAP device. The MIMCAP device includes a bottom electrode and a dielectric layer disposed over the bottom electrode. The dielectric layer includes a stack of individual layers including the bottom high-K layer, the top high-K layer, and a lower-K layer sandwiched therebetween. At least one of the bottom high-K layer or the top high-K layer has the pre-determined thickness.
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