Invention Grant
US09583569B2 Profile control over a collector of a bipolar junction transistor
有权
对双极结型晶体管的集电极进行剖面控制
- Patent Title: Profile control over a collector of a bipolar junction transistor
- Patent Title (中): 对双极结型晶体管的集电极进行剖面控制
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Application No.: US14968286Application Date: 2015-12-14
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Publication No.: US09583569B2Publication Date: 2017-02-28
- Inventor: Renata Camillo-Castillo , David L. Harame , Vibhor Jain , Vikas K. Kaushal , Marwan H. Khater
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Thompson Hine LLP
- Agent Anthony Canale
- Main IPC: H01L29/73
- IPC: H01L29/73 ; H01L29/08 ; H01L29/732 ; H01L29/66 ; H01L21/3105 ; H01L29/737 ; H01L29/10
Abstract:
Device structures for a bipolar junction transistor. A layer is formed on a top surface of a substrate. A trench is formed in the layer and has a plurality of sidewalls with a width between an opposite pair of the sidewalls that varies with increasing distance from the top surface of the substrate. A collector pedestal of the bipolar junction transistor is formed in the trench.
Public/Granted literature
- US20160104770A1 PROFILE CONTROL OVER A COLLECTOR OF A BIPOLAR JUNCTION TRANSISTOR Public/Granted day:2016-04-14
Information query
IPC分类:
