Invention Grant
- Patent Title: Method of making high electron mobility transistor structure
- Patent Title (中): 制造高电子迁移率晶体管结构的方法
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Application No.: US14533864Application Date: 2014-11-05
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Publication No.: US09583588B2Publication Date: 2017-02-28
- Inventor: Chen-Ju Yu , Chih-Wen Hsiung , Fu-Wei Yao , Chun-Wei Hsu , King-Yuen Wong , Jiun-Lei Jerry Yu , Fu-Chih Yang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/06 ; H01L21/335 ; H01L21/336 ; H01L29/66 ; H01L29/423 ; H01L29/10 ; H01L29/20 ; H01L21/02 ; H01L21/225 ; H01L21/3065 ; H01L21/3205 ; H01L21/321 ; H01L21/3213 ; H01L21/324 ; H01L29/201 ; H01L29/205
Abstract:
A method includes epitaxially growing a gallium nitride (GaN) layer over a silicon substrate. The method further includes epitaxially growing a donor-supply layer over the GaN layer. The method further includes forming a source and a drain on the donor-supply layer. The method further includes forming a gate structure between the source and the drain on the donor-supply layer. The method further includes plasma etching a portion of a drift region of the donor-supply layer to a depth of less than 60% of a donor-supply layer thickness. The method further includes depositing a dielectric layer over the donor-supply layer.
Public/Granted literature
- US20150056766A1 METHOD OF MAKING HIGH ELECTRON MOBILITY TRANSISTOR STRUCTURE Public/Granted day:2015-02-26
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