Invention Grant
US09583597B2 Asymmetric FinFET semiconductor devices and methods for fabricating the same
有权
非对称FinFET半导体器件及其制造方法
- Patent Title: Asymmetric FinFET semiconductor devices and methods for fabricating the same
- Patent Title (中): 非对称FinFET半导体器件及其制造方法
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Application No.: US13902540Application Date: 2013-05-24
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Publication No.: US09583597B2Publication Date: 2017-02-28
- Inventor: Xiuyu Cai , Ruilong Xie , Kangguo Cheng , Ali Khakifirooz
- Applicant: GLOBALFOUNDRIES, Inc. , International Business Machines Corporation
- Applicant Address: KY Grand Cayman US NY Armonk
- Assignee: GLOBALFOUNDRIES, INC.,INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: GLOBALFOUNDRIES, INC.,INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: KY Grand Cayman US NY Armonk
- Agency: Lorenz & Kopf, LLP
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L29/66 ; H01L29/78

Abstract:
Asymmetric FinFET devices and methods for fabricating such devices are provided. In one embodiment, a method includes providing a semiconductor substrate comprising a plurality of fin structures formed thereon and depositing a conformal liner over the fin structures. A first portion of the conformal liner is removed, leaving a first space between the fins structures and forming a first metal gate in the first space between the fin structures. A second portion of the conformal liner is removed, leaving a second space between the fin structures and forming a second metal gate in the second space between the fin structures.
Public/Granted literature
- US20140346574A1 ASYMMETRIC FINFET SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING THE SAME Public/Granted day:2014-11-27
Information query
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