Invention Grant
US09583597B2 Asymmetric FinFET semiconductor devices and methods for fabricating the same 有权
非对称FinFET半导体器件及其制造方法

Asymmetric FinFET semiconductor devices and methods for fabricating the same
Abstract:
Asymmetric FinFET devices and methods for fabricating such devices are provided. In one embodiment, a method includes providing a semiconductor substrate comprising a plurality of fin structures formed thereon and depositing a conformal liner over the fin structures. A first portion of the conformal liner is removed, leaving a first space between the fins structures and forming a first metal gate in the first space between the fin structures. A second portion of the conformal liner is removed, leaving a second space between the fin structures and forming a second metal gate in the second space between the fin structures.
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