发明授权
- 专利标题： Method for manufacturing semiconductor device
- 专利标题（中）： 制造半导体器件的方法
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申请号： US15002826申请日： 2016-01-21
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公开(公告)号： US09583601B2公开(公告)日： 2017-02-28
- 发明人: Shunpei Yamazaki , Yasutaka Nakazawa , Masami Jintyou , Junichi Koezuka , Kenichi Okazaki , Takuya Hirohashi , Shunsuke Adachi
- 申请人： Semiconductor Energy Laboratory Co., Ltd.
- 申请人地址： JP Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Kanagawa-ken
- 代理机构： Robinson Intellectual Property Law Office
- 代理商 Eric J. Robinson
- 优先权： JP2012-263814 20121130; JP2012-273866 20121214; JP2013-044876 20130307
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L29/66 ; H01L21/3205 ; H01L21/3213 ; H01L21/473 ; H01L21/4757
摘要：
A method for manufacturing a semiconductor device including a transistor with stable electrical characteristics or high reliability is provided. A gate insulating film is formed over a gate electrode; an oxide semiconductor layer is formed over the gate insulating film; an oxide layer is formed over the oxide semiconductor layer to form a stacked-layer oxide film including the oxide semiconductor layer and the oxide layer; the stacked-layer oxide film is processed into a predetermined shape; a conductive film containing Ti is formed over the stacked-layer oxide film; the conductive film is etched to form source and drain electrodes; and regions in the oxide layer in contact with the source and drain electrodes are heat treated so as to have a low resistivity.
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