Nitride semiconductor device and method for manufacturing nitride semiconductor device

Invention Grant

US09583608B2 Nitride semiconductor device and method for manufacturing nitride semiconductor device 有权

Title translation: 氮化物半导体器件及其制造方法

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Patent Title: Nitride semiconductor device and method for manufacturing nitride semiconductor device
Patent Title (中): 氮化物半导体器件及其制造方法
Application No.: US14418589

Application Date: 2013-05-24
Publication No.: US09583608B2

Publication Date: 2017-02-28
Inventor: Yasuhiro Yamada , Yoshiharu Anda , Asamira Suzuki
Applicant: Panasonic Intellectual Property Management Co., Ltd.
Applicant Address: JP Osaka
Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
Current Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
Current Assignee Address: JP Osaka
Agency: Hamre, Schumann, Mueller & Larson, P.C.
Priority: JP2012-172632 20120803
International Application: PCT/JP2013/003306 WO 20130524
International Announcement: WO2014/020809 WO 20140206
Main IPC: H01L29/778
IPC: H01L29/778 ; H01L29/66 ; H01L21/285 ; H01L29/205 ; H01L29/417 ; H01L29/49 ; H01L29/267 ; H01L29/10 ; H01L29/20 ; H01L29/423 ; H01L21/02 ; H01L23/00

Nitride semiconductor device and method for manufacturing nitride semiconductor device

Abstract:

A nitride semiconductor device of the present invention has a source-electrode-side insulator protection film layer disposed between a source electrode and a drain electrode on a second nitride semiconductor layer and formed at least partially covering the source electrode, a drain-electrode-side insulator protection film layer disposed separately from the source-electrode-side insulator protection film layer and formed at least partially covering the drain electrode, and a gate layer formed in contact with the second nitride semiconductor layer between the source-electrode-side insulator protection film layer and the drain-electrode-side insulator protection film layer and made of a p-type metal oxide semiconductor, and the gate layer has regions opposite to the second nitride semiconductor layer across each of the source-electrode-side insulator protection film layer and the drain-electrode-side insulator protection film layer and a region in contact with the second nitride semiconductor layer.

Abstract(Chinese):

本发明的氮化物半导体器件具有源电极侧绝缘体保护膜层，其设置在第二氮化物半导体层上的源电极和漏电极之间，并且至少部分地覆盖源电极，漏电极侧绝缘体保护膜层，与源电极侧绝缘体保护膜层分离设置，并形成为至少部分地覆盖漏极电极;以及栅极层，其与源极侧绝缘体保护膜之间的第二氮化物半导体层接触形成层和漏电极侧绝缘体保护膜层，由p型金属氧化物半导体构成，栅极层具有穿过源电极侧绝缘体保护膜层和第二氮化物半导体层的与第二氮化物半导体层相反的区域漏电极侧绝缘体保护膜层和与第二氮化物半导体接触的区域 ctor层。

Public/Granted literature

US20150311331A1 NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE Public/Granted day:2015-10-29

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/68	..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76	...单极器件
H01L29/772	....场效应晶体管
H01L29/778	.....带有二维载流子气沟道的，如HEMT