发明授权
US09583609B2 MOS transistor structure and method of forming the structure with vertically and horizontally-elongated metal contacts
有权
MOS晶体管结构以及用垂直和水平延伸的金属触点形成结构的方法
- 专利标题： MOS transistor structure and method of forming the structure with vertically and horizontally-elongated metal contacts
- 专利标题（中）： MOS晶体管结构以及用垂直和水平延伸的金属触点形成结构的方法
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申请号： US13850192申请日： 2013-03-25
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公开(公告)号： US09583609B2公开(公告)日： 2017-02-28
- 发明人: Russell Carlton McMullan , Kamel Benaissa
- 申请人： Texas Instruments Incorporated
- 申请人地址： US TX Dallas
- 专利权人： TEXAS INSTRUMENTS INCORPORATED
- 当前专利权人： TEXAS INSTRUMENTS INCORPORATED
- 当前专利权人地址： US TX Dallas
- 代理商 Jacqueline J. Garner; Charles A. Brill; Frank D. Cimino
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L29/78 ; H01L21/311 ; H01L21/8234 ; H01L21/8238 ; H01L27/02 ; H01L21/768
摘要：
Elongated metal contacts with longitudinal axes that lie in a first direction are formed to make electrical connections to elongated source and drain regions with longitudinal axes that lie in the first direction, and elongated metal contacts with longitudinal axes that lie a second direction are formed to make electrical connections to elongated source and drain regions with longitudinal axes that lie the second direction, where the second direction lies orthogonal to the first direction.
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