Invention Grant
US09583628B2 Semiconductor device with a low-K spacer and method of forming the same
有权
具有低K间隔物的半导体器件及其形成方法
- Patent Title: Semiconductor device with a low-K spacer and method of forming the same
- Patent Title (中): 具有低K间隔物的半导体器件及其形成方法
-
Application No.: US14558904Application Date: 2014-12-03
-
Publication No.: US09583628B2Publication Date: 2017-02-28
- Inventor: Kangguo Cheng , Bruce B. Doris , Ali Khakifirooz , Douglas C. La Tulipe, Jr.
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Roberts Mlotkowski Safran Cole & Calderon, P.C.
- Agent Yuanmin Cai; Andrew M. Calderon
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/786 ; H01L29/772 ; H01L29/66 ; H01L29/08 ; H01L29/49 ; H01L29/51 ; H01L29/78
Abstract:
A device includes a semiconductor substrate. A gate stack on the semiconductor substrate includes a gate dielectric layer and a gate conductor layer. Low-k spacers are adjacent to the gate dielectric layer. Raised source/drain (RSD) regions are adjacent to the low-k spacers. The low-k spacers are embedded in an ILD on the RSD regions.
Public/Granted literature
- US20150137240A1 SEMICONDUCTOR DEVICE WITH A LOW-K SPACER AND METHOD OF FORMING THE SAME Public/Granted day:2015-05-21
Information query
IPC分类:
