发明授权
- 专利标题: Substrate bias circuit and method for biasing a substrate
- 专利标题(中): 衬底偏置电路和偏置衬底的方法
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申请号: US14836223申请日: 2015-08-26
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公开(公告)号: US09584118B1公开(公告)日: 2017-02-28
- 发明人: Chris C. Dao , Stefano Pietri , Juxiang Ren , Robert S. Ruth
- 申请人: FREESCALE SEMICONDUCTOR, INC.
- 申请人地址: US TX Austin
- 专利权人: NXP USA, INC.
- 当前专利权人: NXP USA, INC.
- 当前专利权人地址: US TX Austin
- 主分类号: H03K17/687
- IPC分类号: H03K17/687
摘要:
A substrate bias circuit and method for biasing a substrate are provided. A substrate bias circuit includes a first voltage source, a second voltage source, a diode coupled between the first voltage source and the second voltage source, and a plurality of transistors, each transistor in the plurality of transistors having a substrate terminal. In one example, the first voltage source supplies, via the diode, the substrate terminal of a first transistor of the plurality of transistors during a power-up, and the second voltage source supplies the substrate terminal of the first transistor after the power-up.
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