Invention Grant
US09589095B2 Method of converting between non-volatile memory technologies and system for implementing the method
有权
在非易失性存储器技术之间转换的方法和用于实现该方法的系统
- Patent Title: Method of converting between non-volatile memory technologies and system for implementing the method
- Patent Title (中): 在非易失性存储器技术之间转换的方法和用于实现该方法的系统
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Application No.: US14878039Application Date: 2015-10-08
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Publication No.: US09589095B2Publication Date: 2017-03-07
- Inventor: Hung-Cheng Sung , Yue-Der Chih , Chia-Hsing Chen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW
- Agency: Hauptman Ham, LLP
- Main IPC: G06F17/50
- IPC: G06F17/50 ; H01L29/788 ; H01L29/792 ; H01L29/66 ; H01L27/02 ; H01L27/115

Abstract:
A method of designing a charge trapping memory array includes designing a memory array layout. The memory array layout includes a first type of transistors; electrical connections between memory cells of the memory array layout; a first input/output (I/O) interface; and a charge pump. The method further includes modifying the memory array layout, using a processor, to replace the first type of transistors with a second type of transistors different than the first type of transistors. The method further includes modifying the memory array layout, using the processor, to modify the charge pump based on an operating voltage of the second type of transistors.
Public/Granted literature
- US20160034629A1 METHOD OF CONVERTING BETWEEN NON-VOLATILE MEMORY TECHNOLOGIES AND SYSTEM FOR IMPLEMENTING THE METHOD Public/Granted day:2016-02-04
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