Invention Grant
US09589098B2 Simulated X-ray diffraction spectra for analysis of crystalline materials
有权
用于分析晶体材料的模拟X射线衍射光谱
- Patent Title: Simulated X-ray diffraction spectra for analysis of crystalline materials
- Patent Title (中): 用于分析晶体材料的模拟X射线衍射光谱
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Application No.: US12953080Application Date: 2010-11-23
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Publication No.: US09589098B2Publication Date: 2017-03-07
- Inventor: Deepak Srivastava , Sang Yang , Jun Li
- Applicant: Deepak Srivastava , Sang Yang , Jun Li
- Applicant Address: CN Hong Kong
- Assignee: EOCELL LTD.
- Current Assignee: EOCELL LTD.
- Current Assignee Address: CN Hong Kong
- Main IPC: G06G7/48
- IPC: G06G7/48 ; G06F19/00

Abstract:
Methods and computer programs to quantify defects in an experimentally synthesized material for use in a battery are provided. A method includes an operation for obtaining spectra of the experimentally synthesized material. Further, defected structures of a crystalline structure are created via simulation, and spectra of the defected structures are obtained via simulation. In another method operation, the spectra of the experimentally synthesized material is compared to the spectra of the defected structures obtained via simulation, and if the spectra of the experimentally synthesized material is substantially equal to the spectra of the defected structures obtained via simulation then the defects in the experimentally synthesized material are quantified according to the defects in the defected structures.
Public/Granted literature
- US20120130694A1 Simulated X-Ray Diffraction Spectra for Analysis of Crystalline Materials Public/Granted day:2012-05-24
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