A resistance change memory includes a memory cell array comprising memory cells including magnetic tunnel junction (MTJ) elements; a write and read circuit which performs a write operation and a read operation for the memory cells; a temperature sensor which outputs temperature information corresponding to a temperature of the memory cell array; and a memory controller which controls the write operation and the read operation by the write and read circuit in response to the temperature information, such that a first time period from a write command input to a pre-charge command input is variable according to the temperature information, while a second time period from an active command input to the pre-charge command input is fixed constant regardless of the temperature information.