Invention Grant
- Patent Title: Reducing programming disturbance in memory devices
- Patent Title (中): 减少存储器件中的编程干扰
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Application No.: US13647179Application Date: 2012-10-08
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Publication No.: US09589644B2Publication Date: 2017-03-07
- Inventor: Aaron Yip
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/10 ; G11C16/24

Abstract:
Apparatus and methods are disclosed, such as a method that includes precharging channel material of a string of memory cells in an unselected sub-block of a block of memory cells to a precharge voltage during a first portion of a programming operation. A programming voltage can then be applied to a selected memory cell in a selected sub-block of the block of memory cells during a second portion of the programming operation. The selected memory cell is coupled to a same access line as an unselected memory cell in the unselected sub-block. Additional methods and apparatus are disclosed.
Public/Granted literature
- US20140098606A1 REDUCING PROGRAMMING DISTURBANCE IN MEMORY DEVICES Public/Granted day:2014-04-10
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