Invention Grant
- Patent Title: Alloyed 2N copper wires for bonding in microelectronics devices
- Patent Title (中): 合金2N铜线用于微电子器件中的接合
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Application No.: US13690701Application Date: 2012-11-30
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Publication No.: US09589694B2Publication Date: 2017-03-07
- Inventor: Murali Sarangapani , Ping Ha Yeung , Eugen Milke
- Applicant: Heraeus Materials Technology GmbH & Co. KG
- Applicant Address: DE Hanau
- Assignee: Heraeus Deutschland GmbH & Co. KG
- Current Assignee: Heraeus Deutschland GmbH & Co. KG
- Current Assignee Address: DE Hanau
- Agency: Panitch Schwarze Belisario & Nadel LLP
- Priority: SG201108910 20111201
- Main IPC: C22C9/00
- IPC: C22C9/00 ; H01B1/02 ; C22C9/06 ; H01R4/02 ; B23K35/30 ; C22C1/02 ; C22F1/08 ; H01L23/00 ; C22F1/00 ; B23K20/10
Abstract:
An alloyed 2N copper wire for bonding in microelectronics contains 2N copper and one or more corrosion resistance alloying materials selected from Ag, Ni, Pd, Au, Pt, and Cr. A total concentration of the corrosion resistance alloying materials is between about 0.009 wt % and about 0.99 wt %.
Public/Granted literature
- US20130140084A1 Alloyed 2N Copper Wires for Bonding in Microelectronics Devices Public/Granted day:2013-06-06
Information query
