Invention Grant
US09589791B2 Compound finFET device including oxidized III-V fin isolator
有权
复合finFET器件包括氧化III-V鳍式隔离器
- Patent Title: Compound finFET device including oxidized III-V fin isolator
- Patent Title (中): 复合finFET器件包括氧化III-V鳍式隔离器
-
Application No.: US14948541Application Date: 2015-11-23
-
Publication No.: US09589791B2Publication Date: 2017-03-07
- Inventor: Szu-Lin Cheng , Isaac Lauer , Kuen-Ting Shiu , Jeng-Bang Yau
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/02 ; H01L21/306
Abstract:
A semiconductor device includes a wafer having a bulk layer and a III-V buffer layer on an upper surface of the bulk layer. The semiconductor device further includes at least one semiconductor fin on the III-V buffer layer. The semiconductor fin includes a III-V channel portion. Either the wafer or the semiconductor fin includes an oxidized III-V portion interposed between the III-V channel portion and the III-V buffer layer to prevent current leakage to the bulk layer.
Public/Granted literature
- US20160379820A1 COMPOUND FINFET DEVICE INCLUDING OXIDIZED III-V FIN ISOLATOR Public/Granted day:2016-12-29
Information query
IPC分类:
