Invention Grant
- Patent Title: Automatically adjusting baking process for low-k dielectric material
- Patent Title (中): 自动调节低k介电材料的烘烤过程
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Application No.: US14949206Application Date: 2015-11-23
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Publication No.: US09589856B2Publication Date: 2017-03-07
- Inventor: Chia-Cheng Chou , Chung-Chi Ko , Keng-Chu Lin , Shwang-Ming Jeng
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/66 ; H01L21/3105 ; H01L21/768
Abstract:
A method includes etching a low-k dielectric layer on a wafer to form an opening in the low-k dielectric layer. An amount of a detrimental substance in the wafer is measured to obtain a measurement result. Process conditions for baking the wafer are determined in response to the measurement result. The wafer is baked using the determined process conditions.
Public/Granted literature
- US20160086865A1 Automatically Adjusting Baking Process for Low-k Dielectric Material Public/Granted day:2016-03-24
Information query
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