Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14149886Application Date: 2014-01-08
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Publication No.: US09589877B2Publication Date: 2017-03-07
- Inventor: Shigefumi Dohi , Kiyomi Hagihara
- Applicant: Panasonic Corporation
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: Panasonic IP Management
- Agent Kerry S. Culpepper
- Priority: JP2011-222869 20111007
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L23/498 ; H01L25/18 ; H01L21/56 ; H01L23/538 ; H01L23/00 ; H01L25/03

Abstract:
A semiconductor device includes an expanded semiconductor chip having a first semiconductor chip and an expanded portion extending outward from a side surface of the first semiconductor chip, a second semiconductor chip provided so as to be connected to the expanded semiconductor chip via a plurality of first bumps, and a base provided so as to be connected to the expanded semiconductor chip via a plurality of second bumps. The first bumps are provided between the first semiconductor chip and the second semiconductor chip. The second bumps are provided between the expanded portion and the base.
Public/Granted literature
- US20140117542A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2014-05-01
Information query
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