Invention Grant
- Patent Title: Semiconductor device, method of manufacturing thereof, circuit board and electronic apparatus
- Patent Title (中): 半导体装置及其制造方法，电路基板及电子设备
-
Application No.: US14791859Application Date: 2015-07-06
-
Publication No.: US09589886B2Publication Date: 2017-03-07
- Inventor: Haruki Ito
- Applicant: Seiko Epson Corporation
- Applicant Address: JP
- Assignee: Seiko Epson Corporation
- Current Assignee: Seiko Epson Corporation
- Current Assignee Address: JP
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: JP2003-419406 20031217
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L23/31 ; H01L23/498 ; H01L23/00 ; H01L23/532
Abstract:
A semiconductor device is provided having a semiconductor element including a plurality of electrodes; first wirings coupled to the electrodes and directed toward a center of the semiconductor element from a portion coupled to the electrodes; second wirings coupled between the first wirings and external terminals, the second wirings being directed to an outer area of the semiconductor element relative to the center; and at least one resin layer formed between the first wirings and the second wirings.
Public/Granted literature
- US20150311155A1 SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THEREOF, CIRCUIT BOARD AND ELECTRONIC APPARATUS Public/Granted day:2015-10-29
Information query
IPC分类:
