Invention Grant
- Patent Title: Electroless metal deposition on a manganese or manganese nitride barrier
- Patent Title (中): 在锰或氮化镓屏障上沉积无电镀金属
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Application No.: US15067033Application Date: 2016-03-10
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Publication No.: US09589896B2Publication Date: 2017-03-07
- Inventor: Silvia Armini
- Applicant: IMEC VZW
- Applicant Address: BE Leuven
- Assignee: IMEC VZW
- Current Assignee: IMEC VZW
- Current Assignee Address: BE Leuven
- Agency: Knobbe Martens Olson & Bear, LLP
- Priority: EP15159051 20150313
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L23/532 ; C23C18/12 ; C23C18/20 ; H01L21/768

Abstract:
An electronic circuit structure comprising a substrate, a dielectric layer on top of the substrate and comprising a cavity having side-walls, a manganese or manganese nitride layer covering the side-walls, and a self-assembled monolayer, comprising an organic compound of formula Z-L-A, covering the manganese or manganese nitride layer, wherein Z is selected from the list consisting of a primary amino group, a carboxylic acid group, a thiol group, a selenol group and a heterocyclic group having an unsubstituted tertiary amine in the cycle, wherein L is an organic linker comprising from 1 to 12 carbon atoms and from 0 to 3 heteroatoms, and wherein A is a group attaching the linker to the manganese or manganese nitride layer.
Public/Granted literature
- US20160268208A1 ELECTROLESS METAL DEPOSITION ON A MANGANESE OR MANGANESE NITRIDE BARRIER Public/Granted day:2016-09-15
Information query
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