Invention Grant
US09589896B2 Electroless metal deposition on a manganese or manganese nitride barrier 有权
在锰或氮化镓屏障上沉积无电镀金属

Electroless metal deposition on a manganese or manganese nitride barrier
Abstract:
An electronic circuit structure comprising a substrate, a dielectric layer on top of the substrate and comprising a cavity having side-walls, a manganese or manganese nitride layer covering the side-walls, and a self-assembled monolayer, comprising an organic compound of formula Z-L-A, covering the manganese or manganese nitride layer, wherein Z is selected from the list consisting of a primary amino group, a carboxylic acid group, a thiol group, a selenol group and a heterocyclic group having an unsubstituted tertiary amine in the cycle, wherein L is an organic linker comprising from 1 to 12 carbon atoms and from 0 to 3 heteroatoms, and wherein A is a group attaching the linker to the manganese or manganese nitride layer.
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