Invention Grant
- Patent Title: Radio frequency and electromagnetic interference shielding in wafer level packaging using redistribution layers
- Patent Title (中): 使用再分布层的晶片级封装中的射频和电磁干扰屏蔽
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Application No.: US14922051Application Date: 2015-10-23
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Publication No.: US09589909B1Publication Date: 2017-03-07
- Inventor: Weng F. Yap , Eduard J. Pabst
- Applicant: FREESCALE SEMICONDUCTOR, INC.
- Applicant Address: US TX Austin
- Assignee: NXP USA, INC.
- Current Assignee: NXP USA, INC.
- Current Assignee Address: US TX Austin
- Main IPC: H01L23/552
- IPC: H01L23/552 ; H01L23/498

Abstract:
Radio frequency/electromagnetic interference (RF/EMI) shielding within redistribution layers of a fan-out wafer level package is provided. By using RDL metal layers to provide the shielding, additional process steps are avoided (e.g., incorporating a shielding lid or applying conformal paint on the package back side). Embodiments use metal filled trench vias in the RDL dielectric layers to provide metal “walls” around the RF sensitive signal lines through the dielectric layer regions of the RDL. These walls are coupled to ground, which isolates the signal lines from interference or noise generated outside the walls.
Information query
IPC分类: