Invention Grant
- Patent Title: High-electron-mobility transistor with protective diode
- Patent Title (中): 具有保护二极管的高电子迁移率晶体管
-
Application No.: US14827667Application Date: 2015-08-17
-
Publication No.: US09589951B2Publication Date: 2017-03-07
- Inventor: Toshiharu Nagumo , Takashi Hase , Kiyoshi Takeuchi , Ippei Kume
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: Shapiro, Gabor and Rosenberger, PLLC
- Priority: JP2014-167708 20140820
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L27/02 ; H01L29/66 ; H01L29/08 ; H01L29/10 ; H01L29/20 ; H01L29/417 ; H01L29/423
Abstract:
Performance of a semiconductor device is improved. The semiconductor device includes a substrate composed of silicon, a semiconductor layer composed of p-type nitride semiconductor provided on the substrate, and a transistor including a channel layer provided on the semiconductor layer. The semiconductor device further includes an n-type source region provided in the channel layer, and an n-type drain region provided in the channel layer separately from the source region in a plan view.Each of the source region and the drain region is in contact with the semiconductor layer.
Public/Granted literature
- US20160056145A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-02-25
Information query
IPC分类:
