Invention Grant
- Patent Title: Fast programming antifuse and method of manufacture
- Patent Title (中): 快速编程反熔丝及其制造方法
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Application No.: US14159617Application Date: 2014-01-21
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Publication No.: US09589967B2Publication Date: 2017-03-07
- Inventor: Won Gi Min , Jiang-Kai Zuo
- Applicant: Freescale Semiconductor, Inc.
- Applicant Address: US TX Austin
- Assignee: NXP USA, INC.
- Current Assignee: NXP USA, INC.
- Current Assignee Address: US TX Austin
- Main IPC: G11C11/34
- IPC: G11C11/34 ; H01L27/112 ; H01L23/525 ; G11C17/16

Abstract:
The embodiments described herein provide an antifuse that includes a substrate material and an isolation trench formed in the substrate material, where the isolation trench has a first side and a second side opposite the first side. An electrode is positioned above the substrate material and proximate to the first side of the isolation trench. An insulating layer is disposed between the electrode and the substrate material. So configured, a voltage or current applied between the electrode and the substrate material causes a rupture in the insulating layer and creates a current path through the insulating layer and under the isolation trench to the substrate material proximate the second side of the isolation trench.
Public/Granted literature
- US20150206892A1 FAST PROGRAMMING ANTIFUSE AND METHOD OF MANUFACTURE Public/Granted day:2015-07-23
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