A methodology for forming trench capacitors on an interposer wafer by an integrated process that provides high-capacitance, ultra-low profile capacitor structures and the resulting device are disclosed. Embodiments include forming a polymer block on a front side of an interposer wafer, patterning and etching the polymer block to form one or more trenches, and forming a capacitor on an upper surface of the polymer block and in the one or more trenches.