Invention Grant
US09590056B2 Semiconductor device comprising contact structures with protection layers formed on sidewalls of contact etch stop layers
有权
半导体器件包括具有形成在接触蚀刻停止层的侧壁上的保护层的接触结构
- Patent Title: Semiconductor device comprising contact structures with protection layers formed on sidewalls of contact etch stop layers
- Patent Title (中): 半导体器件包括具有形成在接触蚀刻停止层的侧壁上的保护层的接触结构
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Application No.: US14967983Application Date: 2015-12-14
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Publication No.: US09590056B2Publication Date: 2017-03-07
- Inventor: Kai Frohberg , Marco Lepper , Katrin Reiche
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L29/417 ; H01L29/78 ; H01L23/485 ; H01L21/768 ; H01L23/528 ; H01L23/532 ; H01L23/00
Abstract:
A semiconductor device includes a silicide contact region positioned at least partially in a semiconductor layer, an etch stop layer positioned above the semiconductor layer, and a dielectric layer positioned above the etch stop layer. A contact structure that includes a conductive contact material extends through at least a portion of the dielectric layer and through an entirety of the etch stop layer to the silicide contact region, and a silicide protection layer is positioned between sidewalls of the etch stop layer and sidewalls of the contact structure.
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