Invention Grant
- Patent Title: Level shifter circuit
- Patent Title (中): 电平移位电路
-
Application No.: US14638331Application Date: 2015-03-04
-
Publication No.: US09590594B2Publication Date: 2017-03-07
- Inventor: Munehiro Kozuma
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2014-042758 20140305; JP2014-048642 20140312
- Main IPC: H03L5/00
- IPC: H03L5/00 ; H03K3/012 ; H03K3/356

Abstract:
Leakage current in a standby mode of a level shifter capable of operating with low voltage is reduced. Provided is a level shifter circuit in which an n-channel silicon transistor and an oxide semiconductor transistor are provide in series between an output signal line and a low potential power supply line. The potential of a gate electrode of the oxide semiconductor transistor is raised to a potential higher than input signal voltage by capacitive coupling, so that on-state current of the oxide semiconductor transistor is increased.
Public/Granted literature
- US20150256157A1 Level Shifter Circuit Public/Granted day:2015-09-10
Information query