Invention Grant
- Patent Title: Semiconductor device having duty correction circuit
- Patent Title (中): 具有占空比校正电路的半导体器件
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Application No.: US14318067Application Date: 2014-06-27
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Publication No.: US09590606B2Publication Date: 2017-03-07
- Inventor: Katsuhiro Kitagawa , Hiroki Takahashi
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Priority: JP2013-134497 20130627
- Main IPC: H03K5/156
- IPC: H03K5/156

Abstract:
Disclosed herein is a device includes a duty correction circuit adjusting a duty ratio of a first clock signal based on a duty control signal to generate a second clock signal; a delay line delaying the second clock signal to generate a third clock signal; and a duty cycle detector detecting the duty ratio of the second clock signal to generate the duty control signal in a first mode, and detecting the duty ratio of the third clock signal to generate the duty control signal in a second mode.
Public/Granted literature
- US20150002201A1 SEMICONDUCTOR DEVICE HAVING DUTY CORRECTION CIRCUIT Public/Granted day:2015-01-01
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