发明授权
US09590621B2 Gate drive circuit for a semiconductor switch 有权
半导体开关的栅极驱动电路

  • 专利标题: Gate drive circuit for a semiconductor switch
  • 专利标题(中): 半导体开关的栅极驱动电路
  • 申请号: US14777163
    申请日: 2014-03-14
  • 公开(公告)号: US09590621B2
    公开(公告)日: 2017-03-07
  • 发明人: George Young
  • 申请人: Eisergy Limited
  • 申请人地址: IE Dublin
  • 专利权人: Icergi Limited
  • 当前专利权人: Icergi Limited
  • 当前专利权人地址: IE Dublin
  • 代理机构: Lemaire Patent Law Firm, P.L.L.C.
  • 代理商 Charles A. Lemaire; Jonathan M. Rixen
  • 优先权: GB1304723.8 20130315
  • 国际申请: PCT/EP2014/055215 WO 20140314
  • 国际公布: WO2014/140352 WO 20140918
  • 主分类号: H03K17/687
  • IPC分类号: H03K17/687 H03K17/0412 H03K17/691
Gate drive circuit for a semiconductor switch
摘要:
The present application is directed to drive arrangement for semiconductor switches and in particular to a method of driving the gate of a switch with pulses corresponding to turn-on and turn-off commands through separate turn-on and turn-off transformers. The application provides a fail safe reset feature, a more efficient turn-on circuit and an energy recovery circuit for recovering energy from the gate upon turn-off. The application also provides a novel arrangement for assembling multiple pulse transformers on a circuit board.
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