发明授权
- 专利标题: Gate drive circuit for a semiconductor switch
- 专利标题(中): 半导体开关的栅极驱动电路
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申请号: US14777163申请日: 2014-03-14
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公开(公告)号: US09590621B2公开(公告)日: 2017-03-07
- 发明人: George Young
- 申请人: Eisergy Limited
- 申请人地址: IE Dublin
- 专利权人: Icergi Limited
- 当前专利权人: Icergi Limited
- 当前专利权人地址: IE Dublin
- 代理机构: Lemaire Patent Law Firm, P.L.L.C.
- 代理商 Charles A. Lemaire; Jonathan M. Rixen
- 优先权: GB1304723.8 20130315
- 国际申请: PCT/EP2014/055215 WO 20140314
- 国际公布: WO2014/140352 WO 20140918
- 主分类号: H03K17/687
- IPC分类号: H03K17/687 ; H03K17/0412 ; H03K17/691
摘要:
The present application is directed to drive arrangement for semiconductor switches and in particular to a method of driving the gate of a switch with pulses corresponding to turn-on and turn-off commands through separate turn-on and turn-off transformers. The application provides a fail safe reset feature, a more efficient turn-on circuit and an energy recovery circuit for recovering energy from the gate upon turn-off. The application also provides a novel arrangement for assembling multiple pulse transformers on a circuit board.
公开/授权文献
- US20160036435A1 A GATE DRIVE CIRCUIT FOR A SEMICONDUCTOR SWITCH 公开/授权日:2016-02-04
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