Invention Grant
- Patent Title: Semiconductor module
- Patent Title (中): 半导体模块
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Application No.: US15200847Application Date: 2016-07-01
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Publication No.: US09590622B1Publication Date: 2017-03-07
- Inventor: Tetsuya Inaba , Yoshinari Ikeda , Katsumi Taniguchi , Daisuke Kimijima
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki-Shi, Kanagawa
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki-Shi, Kanagawa
- Agency: Rabin & Berdo, P.C.
- Priority: JP2015-159813 20150813
- Main IPC: H03K17/687
- IPC: H03K17/687 ; H01L29/16 ; H01L23/373 ; H01L23/367 ; H01L25/07 ; H01L29/861 ; H01L23/528

Abstract:
In a semiconductor module, second semiconductor chips (e.g., diodes) are disposed closer to a laminated substrate than first semiconductor chips (MOSFETs). When a control signal supplied to gate electrodes of the first semiconductor chips (MOSFETs) is off, an electric current produced by a voltage from source terminals to a drain board mainly flows through the second semiconductor chips.
Public/Granted literature
- US20170047923A1 SEMICONDUCTOR MODULE Public/Granted day:2017-02-16
Information query
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