Invention Grant
- Patent Title: Method for asymmetrical geometrical scaling
- Patent Title (中): 非对称几何缩放方法
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Application No.: US14693690Application Date: 2015-04-22
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Publication No.: US09594864B2Publication Date: 2017-03-14
- Inventor: Stanley Seungchul Song , Choh Fei Yeap
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: G06F17/50
- IPC: G06F17/50 ; G03F7/20 ; H01L27/02

Abstract:
A circuit layout data has a start value of a first-axis pitch and a start value of a second-axis pitch, the second axis pitch being transverse to the first-axis pitch. The start value of the first axis pitch and the start value of the second axis pitch correspond to single pattern lithography. The first axis pitch is scaled to a first axis single pattern-to-double pattern pitch transition threshold, and then additionally scaled until reaching a first axis double pattern resolution limit. Scaling the first axis pitch to the first axis double pattern resolution limit utilizes routing spaces parallel to the second axis pitch.
Public/Granted literature
- US20160314235A1 METHOD FOR ASYMMETRICAL GEOMETRICAL SCALING Public/Granted day:2016-10-27
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