Invention Grant
- Patent Title: Methods and apparatuses for compensating for source voltage
- Patent Title (中): 用于补偿电源电压的方法和装置
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Application No.: US15019687Application Date: 2016-02-09
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Publication No.: US09595303B2Publication Date: 2017-03-14
- Inventor: Jaekwan Park
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C5/14 ; G11C7/06 ; G11C7/08 ; G11C7/12 ; G11C16/24 ; G11C16/26 ; G11C7/14

Abstract:
Apparatuses and methods for compensating for source voltage is described. An example apparatus includes a source coupled to a memory cell and a read-write circuit coupled to the memory cell. The apparatus further includes a sense current generator coupled to a node of the source and to the read-write circuit, the sense current generator configured to control provision of a sense current by the read-write circuit responsive to a voltage of the node of the source.
Public/Granted literature
- US20160155481A1 METHODS AND APPARATUSES FOR COMPENSATING FOR SOURCE VOLTAGE Public/Granted day:2016-06-02
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