Invention Grant
- Patent Title: Frequency tuning for dual level radio frequency (RF) pulsing
- Patent Title (中): 双频射频(RF)脉冲的频率调谐
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Application No.: US15068999Application Date: 2016-03-14
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Publication No.: US09595423B2Publication Date: 2017-03-14
- Inventor: Gary Leray , Valentin Nikolov Todorow
- Applicant: APPLIED MATERIALS, INC.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Moser Taboada
- Agent Alan Taboada
- Main IPC: H01J7/24
- IPC: H01J7/24 ; H01J37/32

Abstract:
Methods and apparatus for frequency tuning in process chambers using dual level pulsed power are provided herein. In some embodiments, a method for frequency tuning may include providing a first pulsed power at a first frequency while the first frequency is adjusted to a second frequency, wherein the first frequency is a last known tuned frequency at the first pulsed power, storing the second frequency as the last known tuned frequency at the first pulsed power, providing a second pulsed power at a third frequency while the third frequency is adjusted to a fourth frequency, wherein the first pulsed power and the second pulsed power are different and non-zero, and wherein the third frequency is a last known tuned frequency at the second pulsed power, and storing the fourth frequency as the last known tuned frequency at the second pulsed power.
Public/Granted literature
- US20160196958A1 FREQUENCY TUNING FOR DUAL LEVEL RADIO FREQUENCY (RF) PULSING Public/Granted day:2016-07-07
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