Invention Grant
- Patent Title: Integrated device package comprising silicon bridge in an encapsulation layer
- Patent Title (中): 在封装层中包括硅桥的集成器件封装
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Application No.: US14535966Application Date: 2014-11-07
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Publication No.: US09595496B2Publication Date: 2017-03-14
- Inventor: Jae Sik Lee , Hong Bok We , Dong Wook Kim , Shiqun Gu
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Loza & Loza, LLP
- Main IPC: H01L23/02
- IPC: H01L23/02 ; H01L21/44 ; H01L23/538 ; H01L23/00 ; H01L21/768 ; H01L23/31 ; H01L25/065 ; H01L25/00 ; H01L21/56
Abstract:
Some novel features pertain to an integrated device package that includes an encapsulation portion and a redistribution portion. The encapsulation portion includes a first die, a first set of vias coupled to the first die, a second die, a second set of vias coupled to the second die, a bridge, and an encapsulation layer. The bridge is configured to provide an electrical path between the first die and the second die. The bridge is coupled to the first die through the first set of vias. The bridge is further coupled to the second die through the second set of vias. The encapsulation layer at least partially encapsulates the first die, the second die, the bridge, the first set of vias, and the second set of vias. The redistribution portion is coupled to the encapsulation portion. The redistribution portion includes a set of redistribution interconnects, and at least one dielectric layer.
Public/Granted literature
- US20160133571A1 INTEGRATED DEVICE PACKAGE COMPRISING SILICON BRIDGE IN AN ENCAPSULATION LAYER Public/Granted day:2016-05-12
Information query
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