Invention Grant
- Patent Title: FinFET source-drain merged by silicide-based material
- Patent Title (中): FinFET源极 - 漏极由硅化物材料合并
-
Application No.: US14561632Application Date: 2014-12-05
-
Publication No.: US09595524B2Publication Date: 2017-03-14
- Inventor: Brent A. Anderson , Nicolas Breil , Christian Lavoie
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Hoffman Warnick LLC
- Agent Yuanmin Cai
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L27/088 ; H01L21/285 ; H01L21/3213 ; H01L29/78 ; H01L29/66 ; H01L29/45 ; H01L29/08 ; H01L21/8234 ; H01L21/84 ; H01L27/12 ; H01L29/165
Abstract:
A method includes conducting a laser-based anneal treatment on a metal layer positioned above and in direct contact with a top portion of a silicon cap layer located in direct contact with a first diamond shaped epitaxial layer surrounding a first fin and a second diamond shaped epitaxial layer surrounding a second fin. The metal layer extends from the top portion of the silicon cap layer in direct contact with the first diamond shaped epitaxial layer to the top portion of the silicon cap layer in direct contact with the second diamond shaped epitaxial layer. The conducted laser-based anneal treatment forms a silicide layer, a portion of the silicide layer between the first and the second diamond shaped epitaxial layers is substantially thicker than a portion of the silicide layer in contact with the first and the second diamond shaped epitaxial layers.
Public/Granted literature
- US20160020209A1 FINFET SOURCE-DRAIN MERGED BY SILICIDE-BASED MATERIAL Public/Granted day:2016-01-21
Information query
IPC分类:
