Invention Grant
- Patent Title: Enhanced hydrogen barrier encapsulation method for the control of hydrogen induced degradation of ferroelectric capacitors in an F-RAM process
- Patent Title (中): 用于控制F-RAM工艺中铁电电容器氢诱导退化的增强氢气阻挡封装方法
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Application No.: US14514008Application Date: 2014-10-14
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Publication No.: US09595576B2Publication Date: 2017-03-14
- Inventor: Shan Sun , Tom E. Davenport
- Applicant: Cypress Semiconductor Corporation
- Applicant Address: US CA San Jose
- Assignee: Cypress Semiconductor Corporation
- Current Assignee: Cypress Semiconductor Corporation
- Current Assignee Address: US CA San Jose
- Main IPC: H01L23/29
- IPC: H01L23/29 ; H01L49/02 ; H01L27/115
Abstract:
An encapsulated ferroelectric capacitor or ferroelectric memory cell includes encapsulation materials adjacent to a ferroelectric capacitor, a ferroelectric oxide (FEO) layer over the encapsulated ferroelectric capacitor, and an FEO encapsulation layer over the ferroelectric oxide to provide protection from hydrogen induced degradation.
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