Invention Grant
- Patent Title: STT-MRAM cell structures
- Patent Title (中): STT-MRAM细胞结构
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Application No.: US14595955Application Date: 2015-01-13
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Publication No.: US09595664B2Publication Date: 2017-03-14
- Inventor: Jun Liu , Gurtej Sandhu
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Fletcher Yoder, P.C.
- Main IPC: H01L43/12
- IPC: H01L43/12 ; G11C11/16 ; H01L29/66

Abstract:
A magnetic cell structure including a nonmagnetic bridge, and methods of fabricating the structure are provided. The magnetic cell structure includes a free layer, a pinned layer, and a nonmagnetic bridge electrically connecting the free layer and the pinned layer. The shape and/or configuration of the nonmagnetic bridge directs a programming current through the magnetic cell structure such that the cross sectional area of the programming current in the free layer of the structure is less than the cross section of the structure. The decrease in the cross sectional area of the programming current in the free layer enables a lower programming current to reach a critical switching current density in the free layer and switch the magnetization of the free layer, programming the magnetic cell.
Public/Granted literature
- US20150125966A1 STT-MRAM CELL STRUCTURES Public/Granted day:2015-05-07
Information query
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