Invention Grant
US09595694B2 Thin film transistor substrate, organic light-emitting apparatus including the same, method of manufacturing the thin film transistor substrate, and method of manufacturing the organic light-emitting apparatus
有权
薄膜晶体管基板，包括该薄膜晶体管基板的有机发光装置，薄膜晶体管基板的制造方法以及制造有机发光装置的方法
- Patent Title: Thin film transistor substrate, organic light-emitting apparatus including the same, method of manufacturing the thin film transistor substrate, and method of manufacturing the organic light-emitting apparatus
- Patent Title (中): 薄膜晶体管基板，包括该薄膜晶体管基板的有机发光装置，薄膜晶体管基板的制造方法以及制造有机发光装置的方法
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Application No.: US14013871Application Date: 2013-08-29
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Publication No.: US09595694B2Publication Date: 2017-03-14
- Inventor: Dong-Won Lee
- Applicant: Samsung Display Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Knobbe Martens Olson & Bear LLP
- Priority: KR10-2012-0149761 20121220
- Main IPC: H01L27/32
- IPC: H01L27/32 ; H01L51/56 ; H01L29/66 ; H01L29/786 ; H01L27/12
Abstract:
A thin film transistor (TFT) substrate which may facilitate subsequent TFT processing by reducing an elevation difference on the top surface of the substrate is disclosed. Aspects include an organic light-emitting apparatus including the TFT substrate, a method of manufacturing the TFT substrate, and a method of manufacturing the organic light-emitting apparatus. In one aspect the TFT substrate includes: a substrate; a height adjusting layer that is disposed on the substrate and has a thickness in a first region greater than a thickness in a second region; and a TFT that is formed on the height adjusting layer to correspond to the second region of the height adjusting layer.
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